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BUK7E2R3-40E Datasheet, NXP Semiconductors

BUK7E2R3-40E Datasheet, NXP Semiconductors

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BUK7E2R3-40E fet equivalent

  • n-channel trenchmos standard level fet.
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BUK7E2R3-40E Features and benefits

BUK7E2R3-40E Features and benefits


* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally demanding environments due to 175 °C rating
* True standard level gate with VGS.

BUK7E2R3-40E Application

BUK7E2R3-40E Application

1.2 Features and benefits
* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally deman.

BUK7E2R3-40E Description

BUK7E2R3-40E Description

Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits
* AEC Q101 compliant.

Image gallery

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TAGS

BUK7E2R3-40E
N-channel
TrenchMOS
standard
level
FET
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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